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| DTC114TUA SOT-323 DIGITAL TRANSISTOR TRANSISTORS(NPN) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. * The bias resistors consist of thin-film resistors with complete isolation to without connecting extemal input. They also have the advantage of almost completely eliminating parasitic effects. * Only the on/off conditions need to be set for operation marking device design easy. SOT-323 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.006 gram 0.053(1.35) 0.045(1.15) 0.006(0.15) 0.003(0.08) REF 0.021(0.53) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) 0.016(0.40) 0.008(0.20) 0.096(2.45) 0.085(2.15) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. (2) (1) (1) Base (2) Emitter (3) Collector O 0.055(1.40) 0.047(1.20) 1 3 2 0.087(2.20) 0.079(2.00) (3) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Dissipation Junction Temperature Junction and storage Temperature o o Dimensions in inches and (millimeters) SYMBOL VCBO VCEO VEBO IC PC Tj TJ , Tstg VALUE 50 50 5 100 200 150 -55 to +150 UNITS V V V mA mW o o C C ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted ) CHARACTERISTICS Collector-base breakdown voltage (IC= 50mA, IE=0) Collector-emitter breakdown voltage (IC= 1mA, IB=0) Emitter-base breakdown voltage (IE= 50mA, IC=0) Collector cut-off current (VCB= 50V, IE=0) Emitter cut-off current (VEB= 4V, IC=0) DC current gain (VCE= 5V, IC= 1mA) Collector-emitter saturation voltage (IC= 10mA, IB= 1mA) Transition frequency (VCE= 10V, IE= -5mA, f=100MHz) Input resistor NOTE: "Fully ROHS compliant", "100% Sn plating (Pb-free)". SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT MIN. 50 50 5 100 7 TYP. 300 250 10 MAX. 0.5 0.5 600 0.3 13 UNITS V V V mA mA V MHz KW 2006-3 R1 RATING AND CHARACTERISTICS CURVES (DTC114TUA) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1K 500 200 VCE= 5V 1 500m 200m 100m 50m 20m 10m 5m 2m 1m Ta= 100 C O 25 C O -40 C O IO / IB= 10 hFE, CURRENT GAIN 100 50 20 10 5 2 1 Ta= 100 C O 25 C O -40 C O 100m 200m 500m 1m 2m 5m 10m 20m 50m 100m 100m 200m 500m 1m 2m 5m 10m 20m 50m 100m Figure1 DC current gain vs. collector current IC, COLLECTOR CURRENT (A) Figure2 Collector- emitter saturation voltage vs. collector current IC , COLLECTOR CURRENT(A) COLLECTOR BASE R1 EMITTER Figure3 Equivalent circuit DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures. |
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